Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector
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Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures
Persistent photoconductivity effects have been characterized in n-type Al0.15Ga0.85N/GaN heterostructures using both monochromatic light and room light illumination. Time constants of ;1310 s have been observed, and measurements of photocurrent specta performed using various illumination geometries and techniques have shown that defect levels exist in both the Al0.15Ga0.85N and GaN layers. Broa...
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